MATEC Web Conf.
Volume 355, 20222021 International Conference on Physics, Computing and Mathematical (ICPCM2021)
|Number of page(s)||9|
|Section||Computing Methods and Computer Application|
|Published online||12 January 2022|
InP and InGaAs grown on InP substrate by molecular beam epitaxy
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
* Corresponding author: firstname.lastname@example.org
InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2 were compared with the layers grown using As4 from a Riber standard cracker cell. When As4 is used, the highest electron mobility of InGaAs is 3960 cm2/(V·s) with the V/III ratio of 65. When converted to As2, the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm2/(V • s) to 5060 cm2/(V • s).
© The Authors, published by EDP Sciences, 2022
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