MATEC Web Conf.
Volume 330, 2020International Conference on Materials & Energy (ICOME’19)
|Number of page(s)||5|
|Published online||01 December 2020|
Inter and intra band impurity-related absorption in (In,Ga)N/GaN QW under composition, size and impurity effects
1 LPS, FSDM, Sidi Mohammed Ben Abdellah University, Fes, Morocco
2 ENSAM Laboratory, ENSAM, Hassan II University, Casablanca, Morocco,
* Corresponding author: firstname.lastname@example.org
In this paper, we theoretically investigate the impacts of Internal well composition, size and impurity's position on the inter valence-conduction bands and intra conduction band optical absorption in GaN/(In,Ga)N/GaN hetero-structure. Based on the numerically finite element method (FEM), the impurity's related Schrödinger equation is solved for the finite potential barrier considering the dielectric constant and effective-mass mismatches between the well and its surrounding matrix. Our results show that the absorption is strongly governed by the dipole matrix element and initial and final implied states transition energies. For a fixed barrier width, the absorption spectra are found red-shifted (blue-shifted) with increasing the well width (In-concentration). It is also shown that the impurity's absorption phenomenon is more pronounced for the off-center case compared to the on-center one. We conclude that the proper control of these parameters is required to best understanding of the optical absorption for solar cell applications.
© The Authors, published by EDP Sciences, 2020
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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