| Issue |
MATEC Web Conf.
Volume 225, 2018
UTP-UMP-VIT Symposium on Energy Systems 2018 (SES 2018)
|
|
|---|---|---|
| Article Number | 05013 | |
| Number of page(s) | 6 | |
| Section | Energy generation efficiency | |
| DOI | https://doi.org/10.1051/matecconf/201822505013 | |
| Published online | 05 November 2018 | |
Study the Effects of Photon Radiation on Power MOSFET for Harsh Environment Application
1
Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Malaysia
2
Faculty of Engineering, Multimedia University, Cyberjaya, Malaysia
* Corresponding author: erman.azwan@gmail.com
The rapid growth of the advanced technologies in power electronics system gives a challenge to the electronic device to sustain with the modern technologies nowadays. The challenges are also including the place where the system was installed for example the application in the harsh environment. Harsh environment application requires an electronic device deals with radiation pollution. Hence, the electronic device will suffer from this phenomenon and make the whole system to malfunction and break down. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is one type of electronic device that is the most broadly for high voltage and high switching speed application. The aim of this paper is to studies the photon radiation effect toward the Power MOSFET performance. The study focus on the changing of the electrical characteristics of the device after radiated with photon radiation. Process simulation and Device simulation tools in Sentaurus Synopsys Software used for the research to validate all the theory.
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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