Issue |
MATEC Web Conf.
Volume 189, 2018
2018 2nd International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2018)
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Article Number | 11006 | |
Number of page(s) | 7 | |
Section | Semiconductor Applications | |
DOI | https://doi.org/10.1051/matecconf/201818911006 | |
Published online | 10 August 2018 |
Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases
Faculty of Electronics and Electrical Engineering, Hung Yen University of Technology and Education, Vietnam
Corresponding author: tuandoanh@utehy.edu.vn
Tetramethylsilane, alone and in combination with inert gases are widely used in various material processing. The electron transport coefficients in binary mixtures tetramethylsilane gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was firstly calculated and analyzed by a two-term approximation of the Boltzmann equation in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (Townsend). These results can be considered to use in many industrial applications depending on particular application of gas, especially on plasma polymerization and plasma enhanced chemical vapour deposition.
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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