MATEC Web Conf.
Volume 139, 20172017 3rd International Conference on Mechanical, Electronic and Information Technology Engineering (ICMITE 2017)
|Number of page(s)||4|
|Published online||05 December 2017|
Fabrication of depletion type micro-ring modulator with high extinction ratio and high coupling quality factor
1 Center for Advanced Electronic Material and Devices, Shanghai Jiao Tong University, Shanghai 200240, China
2 State Key Lab of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
* Corresponding author: firstname.lastname@example.org
We experimentally demonstrate an optical micro-ring modulator based on a reverse-biased PN junction which is integrated into a silicon-on-insulator (SOI) rib waveguide. The performance of micro-ring resonator with different sizes is simulated with Lumerical MODE Solutions. The fabricated device provides a high extinction ratio (ER) of 20 dB and coupling quality factor (Q) 2*104. Modulation rate is higher than 11 Gbit/s with only 2 V peak-to-peak (Vpp) driving voltage. The theoretical modulation rate can be higher than 25 Gbit/s by the optimizing the matching resistor and the test system.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (http://creativecommons.org/licenses/by/4.0/).
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