MATEC Web Conf.
Volume 112, 201721st Innovative Manufacturing Engineering & Energy International Conference – IManE&E 2017
|Number of page(s)||6|
|Published online||03 July 2017|
Study of the areal density in the read heads with spin valves with nano-oxide-layer insertion
1 Gheorghe Asachi Technical University of Iasi, Department of Telecommunications, Carol I Blvd., No.11, 700506 Iasi, Romania
2 Gheorghe Asachi Technical University of Iasi, Department of Physics, Dimitrie Mangeron Blvd. 67, 700050, Iasi, Romania
* Corresponding author: email@example.com
Read heads performances have been analyzed by simulation (HFSS) in the case of the devices designed with a category of spin valve structures with nano-oxide-layer insertion, based on Co alloys. Different structures of the stack of layers in the spin valve were considered in order to increase the magnetic resistance due to contribution of the insertion layer. A parametrical evolution of the resistance-area product variation ΔRA, and of the areal storage density have been obtained using the simulation and theoretical data. Results indicate areal densities up to 780 Gbit/in2 for the system manufactured in practice, when the variation of the resistance-area product was greater than 7.4…9 mΩ•μm2, strongly dependent on the nanooxide insertion layer. These performances can be overlapped by parameters correlation, indicated by simulation. Consequently, our simulations offer solutions for improving the recording performances by controlling the spin valve structure.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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