| Issue |
MATEC Web Conf.
Volume 98, 2017
16th International Conference on Organized Molecular Films (ICOMF16-LB16)
|
|
|---|---|---|
| Article Number | 04002 | |
| Number of page(s) | 4 | |
| Section | Graphene and carbon materials | |
| DOI | https://doi.org/10.1051/matecconf/20179804002 | |
| Published online | 08 February 2017 | |
Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si
1 St. Petersburg State Electrotechnical University, 197376, 5 Prof. Popov st., St. Petersburg, Russia
2 Ioffe Institute, RAS, 194021, 26 Politekhnicheskaya, St Petersburg, Russia
3 St. Petersburg State University, 199034, 7-9 Universitetskaya nab., St. Petersburg, Russia
4 Institute of Macromolecular Compounds, 199004, 31 RAS, Bol’shoy pr., St. Petersburg, Russia
* Corresponding author: goloudina@mail.ru
High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111) substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111) film are aligned with four Si(111) planes at the SiC/Si interface. It was shown the SiC films (35 nm) grown on Si(111) at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on Si (100) substrate at the same temperature. It was shown the SiC films (30-35 nm) are able to cover the voids in Si substrate with size up to 10 μm.
© The Authors, published by EDP Sciences, 2017
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