Issue |
MATEC Web Conf.
Volume 78, 2016
2nd International Conference on Green Design and Manufacture 2016 (IConGDM 2016)
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Article Number | 01107 | |
Number of page(s) | 7 | |
DOI | https://doi.org/10.1051/matecconf/20167801107 | |
Published online | 07 October 2016 |
Comparative Study About the Structural Properties of ZnO Films Grown on Si, GaAs, And Al2O3 Substrates and a GaN Template
Department of Nanobiotronics, Hoseo University, Sechul-ri 165, Baebang-eup, Asan 336-795, Korea
* Corresponding author: ohdongcheol@hoseo.edu
We report on the structural properties of ZnO films grown on (001) Si, (001) GaAs, (0001) Al2O3 substrates and a (0001) GaN template by RF-sputtering. It is observed that all the ZnO films have textured structures with a preferred orientation of the c-axis, irrespective growth conditions, in terms of atomic-force microscope and wide-range X-ray diffractometer. However, it is found that the ZnO films in the ZnO-on-Si and ZnO-on-GaAs are consisted of various domains with different orientations, while the ZnO films in the ZnO-on-Al2O3 and ZnO-on-GaN are consisted of a single domain with the same orientation in terms of the φ-scan of X-ray diffractometer. Moreover, it is found that the ZnO-on-GaN has smaller edge dislocation density and screw dislocation density than the ZnO-on-Al2O3, which seriously depends on substrate temperature, in terms of the ω-scan of X-ray diffractometer.
© The Authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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