Issue |
MATEC Web of Conferences
Volume 30, 2015
2015 the 4th International Conference on Material Science and Engineering Technology (ICMSET 2015)
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Article Number | 03003 | |
Number of page(s) | 3 | |
Section | Materials science and Engineering | |
DOI | https://doi.org/10.1051/matecconf/20153003003 | |
Published online | 04 November 2015 |
Electronic Structures of Silicene Doped with Galium: First Principle study
Jurusan Fisika (Physics Department), Universitas Brawijaya, Indonesia
a m_ariesto@ub.ac.id
b wafamaftukhin@gmail.com
Following the success of graphene which possesses unique and superior properties, 2D material other than graphene become centre of interest of material scientists.Silicene, which has the same crystal structure as graphene but consist of silicon atoms rather than carbon become intriguing material due to domination of silicon as main material of electronic component. It is common to enhance electronic properties of semiconductor by adding dopant atoms. The electronic properties of Silicene doped with Gallium are investigated using first principle calculation based on density functional theory (DFT).Ga doping changes character of silicene from semimetal to conductor except silicene with Ga doping on S-site (Ga atom substitutes one Si atom) which lead to semiconductor.
© Owned by the authors, published by EDP Sciences, 2015
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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