Recent Advances in Short Circuit Protection Methods for SiC MOSFET

School of Information Engineering, Minzu University of China, 100081 Beijing, China

^* Corresponding author: 19011337@muc.edu.cn

Abstract

Due to its high efficiency, low switching losses, and high temperature stability, Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been widely used in various fields. Therefore, the protection of SIC MOSFET devices is crucial. The significance of this research topic lies in comparing the existing short-circuit protection methods and technologies for SiC MOSFET, pointing out the advantages and shortcomings of each method, and providing suggestions. Firstly, the principles and impacts of HSF and FUL in short-circuit faults are introduced. Secondly, this article elaborates on shortcircuit protection methods from two aspects: hardware protection and software protection, concentrating mostly on recently researched hardware protection methods. Finally, a comparison between the two protection methods is made, and potential improvement solutions are proposed. Based on the research conducted, the author believes that the current hardware protection method based on current detection is the optimal solution for SiC MOSFET short-circuit protection. Future research can be focused on integrating other solutions for further optimization on this basis.