| Issue |
MATEC Web Conf.
Volume 123, 2017
2017 The 2nd International Conference on Precision Machinery and Manufacturing Technology (ICPMMT 2017)
|
|
|---|---|---|
| Article Number | 00027 | |
| Number of page(s) | 6 | |
| DOI | https://doi.org/10.1051/matecconf/201712300027 | |
| Published online | 21 September 2017 | |
Preparation and properties of the (Sr,Ba)Nb2O6 thin films by using the sputtering method
1 Department of Electronic Engineering, Kao Yuan University, Kaohsiung, Taiwan
2 Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan
* e-mail: t10068@cc.kyu.edu.tw
Strontium barium niobate (Sr0.3Ba0.7Nb2O6, SBN) thin films were deposited on silicon substrate by using the radio frequency magnetron sputtering and under different deposition power and time at room temperature. Surface morphology and thicknesses of the SBN thin films were characterized by field emission scanning electron microscopy. The crystallization films at different deposition power and time were analyzed by X-ray diffraction (XRD) using CuKα radiation from a Rigaku rotating anode with an incident angle of 2°. The remnant polarization (Pr), saturation polarization (Ps), and minimum coercive field (Ec) properties of the metal-ferroelectric-metal (MFM) structure were measured using ferroelectric material test instrument. The SBN thin films deposited at 90 min and 125 W had the maximum Pr, Ps, and minimum Ec of 1.26 μC/cm2, 2.41 μC/cm2, and 201.6 kV/cm, respectively. From above results, it knows that the SBN thin films suit for application on ferroelectric random access memory (FeRAM).
© The Authors, published by EDP Sciences, 2017
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