Open Access
MATEC Web of Conferences
Volume 26, 2015
2015 3rd Asia Conference on Mechanical and Materials Engineering (ACMME 2015)
Article Number 01011
Number of page(s) 4
Section Advanced materials and properties
Published online 12 October 2015
  1. G. Parascandolo, G. Bugnon, A. Feltrin and C. Ballif, High-rate deposition of microcrystalline silicon in a large-area PECVD reactor and integration in tandem solar cells, Prog. Photovolt. Res. Appl. 18 (2010) 257–264.
  2. E. Monaghan, T. Michna, C. Gaman, D. O’Farrel, K. Ryan, D. Adley, T.S. Perova, B. Drews, M. Jaskot, A.R. Ellingboe, Characterisation of thin silicon films deposited by plasma enhanced chemical vapour deposition at 162 MHz, using a large area, scalable, multi-tile-electrode plasma source, Thin Solid Films, 519 (2011) 6884–6886. [CrossRef]
  3. C. Smit, R.A.C.M.M. Van Swaaij, H. Donker, A.M.H.N. Petit, W.M.M. Kessels, and M.C.M. Van de Sanden, Determining the material structure of microcrystalline Silicon from Raman spectra, J. Appl. Phys., 94 (2003) 3582–3588. [CrossRef]
  4. M. Ledinsky, A. Vetushka, J. Stuchlik, T. Mates, A. Fejfar, J. Kocka, and J. Stepnek, Crystallinity of the mixed phase silicon thin films by Raman spectroscopy, J. Non-Cryst. Sol., 354 (2008) 2253–2257. [CrossRef]
  5. P. Temple and C. Hathaway, Multiphonon Raman spectrum of silicon, Phys. Rev. B, 7 (1973) 3685–3697. [CrossRef]
  6. A. V. Baranov, A. V. Fedorov, T. S. Perova, S. Solosin, R. A. Moore, V. Yam, D. Bouchier and V. Le Thanh, Polarized Raman spectroscopy of multilayer Ge/Si (001) quantum dot heterostructures, J.Appl.Phys., 96 (2004) 2857–2863. [CrossRef]
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