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Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

Dina I. Bakranova, Sergey A. Kukushkin, Kair Kh. Nussupov, Andrey V. Osipov and Nurzhan B. Beisenkhanov

MATEC Web of Conferences, 43 (2016) 01003

DOI: https://doi.org/10.1051/matecconf/20164301003

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