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Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing

SitiRahmah Aid, Azura Hamzah, Sumiaty Ambran, Satoru Matsumoto, Zaharah Johari and Genshu Fuse

MATEC Web of Conferences, 26 (2015) 03008

DOI: https://doi.org/10.1051/matecconf/20152603008

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