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Cited article:

Numerical and experimental investigation of oxygen transport in 300 mm Czochralski silicon crystal growth with transverse magnetic fields

Wenkai Liu, Songsong Chen, Fuman Jiang, Yun Liu, Zhongying Xue and Xing Wei
Vacuum 233 113994 (2025)
https://doi.org/10.1016/j.vacuum.2024.113994

Growth chamber gas dynamics in Cz silicon single crystal growth process

Nataliya A. Verezub and Anatoly I. Prostomolotov
Modern Electronic Materials 10 (3) 185 (2024)
https://doi.org/10.3897/j.moem.10.3.140627

Influence of Argon Gas Flow Rate on Oxygen and Carbon Impurities Concentration in Multicrystalline Silicon Grown by Directional Solidification Furnace: Numerical and Experimental Investigation

S. Sugunraj, G. Aravindan, M. Srinivasan and P. Ramasamy
Silicon (2022)
https://doi.org/10.1007/s12633-022-02097-5