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Cited article:

Impact of Physical and Material Parameters on the Threshold Voltage and the Channel Resistance of Nanowire Field-Effect Transistors for Advanced Nanoscale Devices

Rebiha Marki, Lakhdar Dehimi, Kamal Zeghdar, Fortunato Pezzimenti, Giacomo Messina and Francesco G. Della Corte
Electronics 14 (21) 4279 (2025)
https://doi.org/10.3390/electronics14214279

Equisensitive adjustment of planar Hall effect sensor’s operating field range by material and thickness variation of active layers

Amir Elzwawy, SungJoon Kim, Artem Talantsev and CheolGi Kim
Journal of Physics D: Applied Physics 52 (28) 285001 (2019)
https://doi.org/10.1088/1361-6463/ab18f2