| Issue |
MATEC Web Conf.
Volume 227, 2018
2018 4th International Conference on Communication Technology (ICCT 2018)
|
|
|---|---|---|
| Article Number | 01002 | |
| Number of page(s) | 5 | |
| Section | Mechatronic Systems and Materials Science | |
| DOI | https://doi.org/10.1051/matecconf/201822701002 | |
| Published online | 14 November 2018 | |
Molecular Dynamics Analysis of SiC Single Crystal Materials
College of Physics and Electronic Information, Baicheng Teachers College, 137000, China
SiC is modeled as a new generation of semiconductor materials because of its excellent properties. The 6H-SiC is modeled by Materials Studio. The band and state density of 6H-SiC are analyzed. In addition, 6H-SiC Substrate, the AL element doping, from the microscopic mechanism, analyzed the 6H-SiC semiconductor conductivity.
© The Authors, published by EDP Sciences, 2018
This is an open access article distributed under the terms of the Creative Commons Attribution License 4.0 (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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