Open Access
MATEC Web of Conferences
Volume 27, 2015
2015 4th International Conference on Engineering and Innovative Materials (ICEIM 2015)
Article Number 01009
Number of page(s) 5
Section Materials science and engineering
Published online 20 October 2015
  1. R. Huang, J. Zou, R. Wang, C. Fan, Y. Ai, J. Zhuge, Y. Wang, Experimental Demonstration of Current Mirrors Based on Silicon Nanowire Transistors for Inversion and Subthreshold Operations, IEEE Trans. on Electron Devices, 58 (2011), p. 3639. [CrossRef]
  2. A. Martinez, M. Aldegunde, N. Seoane, A. R. Brown, J. R. Barker, A. Asenov, Quantum-Transport Study on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors, IEEE Trans. on Electron Devices, 58 (2011), p. 2209. [CrossRef]
  3. L. Ansari, B. Feldman, G. Fagas, J. Colinge, J. Greer, Atomic scale simulation of a junctionless silicon nanowire transistor, 12th Int. Conf. on Ultimate Integration on Silicon (ULIS), pp. 1–3, March (2011).
  4. Y. Hashim and O. Sedik, Temperature effect on IV characteristics of Si nanowire transistor, IEEE Colloquium on Humanities, Science and Engineering Research (CHUSER 2011), pp. 331–334, Dec (2011). [CrossRef]
  5. Y. Hashim and O. Sidek, Study and Simulation of Static Characteristics of Nanowire Inverter with Different Circuit Configurations, Int. Rev. Model. Simul. (IREMOS), 5 (2012), p. 93.
  6. Information on
  7. B. P. Haley, S. Lee, M. Luisier, H. Ryu, F. Saied, S. Clark, H. Bae, and G. Klimeck, Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB, J. Phys. Conf. Ser., 180 (2009), p. 012075. [CrossRef]