The reliability of the power semiconductor module on the operating temperature
National Research Tomsk Polytechnic University, 634050 Tomsk, Russia
a Corresponding author: firstname.lastname@example.org
A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural convection and obtained by using statistical data analysis. The integrated assessment of reliability based on the methods of physics failures. The necessity of taking into account the actual non-stationary temperature fields to improve the reliability of the forecast operating life of power semiconductor devices.
© Owned by the authors, published by EDP Sciences, 2014
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