Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device
1 Minghsin Universuty of Science and Technology, Xinxing Rd, 1, Xinfeng 30401, Taiwan
2 Treasure Giant Technology Inc., 3F-1, 42, Lyushuei Rd., Hsinchu City, 30068 Taiwan
3 Southern Taiwan University of Science and Technology, 1, Nan-Tai Street, Yungkang District, Tainan 710, Taiwan
4 National Nano Device Laboratories, Hsinchu City, 30068 Taiwan
5 Taiwan Semiconductor Manufacturing Company Limited, Hsinchu City, 30068 Taiwan
6 United Microelectronics Corporation, Hsinchu City, 30068 Taiwan
a Corresponding author: email@example.com
The Si-rich metal -oxide-nitride-oxide-silicon (hereafter Si-MONOS) can be candidates for non-volatile total ionization dose (TID) radiation sensors. In the case of Si-MONOS gamma radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT. The change of VT for Si-MONOS after gamma irradiation has a strong correlation to the TID of gamma ray exposure as well. The Si-MONOS capacitor device in this study has demonstrated the better feasibility for non-volatile TID radiation sensing in the future.
© The Authors, published by EDP Sciences, 2016
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