Effect of Sputtering Pressure on the Properties of Boron and Gallium Co-doped ZnO Thin Films
School of Materials Science and Engineering, Shanghai University, No. 333 Nanchen Road, Shanghai 200444, China
B and Ga co-doped ZnO films were fabricated by RF magnetron sputtering method. The effects of sputtering pressure on the electrical, optical, structural and morphological properties of the films (BGZO) were investigated. As sputtering pressure increased up to 6mTorr, the film crystallinity was improved. At the sputtering pressure of 6mTorr, the films showed smooth and dense of film surface, lower resistivity and higher Hall mobility. It was also observed that all films showed high transparency in the visible range. The film showed blue shift of optical band gap with increaseing of sputtering pressure.
© The Authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.