Preparation of CuAlO2 Thin Films by Sol-Gel Method Using Nitrate Solution Dip-Coating
1 Department of Human Culture, Faculty of Human Studies, Ishinomaki Senshu University, Ishinomaki, Japan
2 Department of Basic Science, Faculty of Science and Engineering, Ishinomaki Senshu University, Ishinomaki, Japan
CuAlO2 thin films are prepared by sol-gel dip-coating followed by annealing in nitrogen atmosphere using copper nitrate and aluminum nitrate as metal source materials. X-ray diffraction (XRD) patterns show (003), (006) and (009) oriented peaks of CuAlO2 at annealing temperature of 800 – 1000°C. This result indicates that the CuAlO2 films prepared in the present work are c-axis oriented. XRD peak intensity increase with annealing temperature and becomes maximum at 850°C. The CuAlO2 XRD peak decreased at annealing temperature of 900°C with appearance of a peak of CuO, and then increased again with annealing temperature until 1000 °C. The films have bandgap of 3.4 eV at annealing temperature of 850°C in which the transparency becomes the highest. At the annealing temperature of 850°C, scanning electron microscope (SEM) observation reveals that the films are consist of amorphous fraction and microcrystalline CuAlO2 fraction.
Key words: CuAlO2 / Sol-gel / Transparent conductive oxide / X-ray diffraction
© The Authors, published by EDP Sciences, 2016
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