Analysis of Kirk effect of an innovated high side Side-Isolated N-LDMOS device
School of Software and Microelectronics, Peking University, Beijing, China
2 Department of Computer Science and Information Engineering, Asia University 500, Lioufeng Rd., Taichung 41354, Taiwan.
a Corresponding author: email@example.com
An ESOA of LDMOS device is very critical for power device performance. Kirk effect is the one of the major problem which leads to poor ESOA performance. The cause of the problem mainly due to the high beta value of parasitic NPN transistor in the p-body. In this study, we proposed a new 3D high side Side–Isolated N-Channel LDMOS which we have obtained not only benchmark Ron and breakdown performance, but also better ESOA without Kirk effect. We have compared the analysis of Kirk effect between the new device and the conventional N–LDMOS structure with LATID technique for the formation of the p–body of both device structures.
© Owned by the authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.