Field-Effect Phototransistors Based on Graphene-Quantum Dot Hybrids
Institute of Laser & Opto-Electronics, College of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, people’s Republic of China
a Ya-Ting Zhang: email@example.com
Field effect photo-transistors (FEpTs) based on graphene-PbSe quantum dot (QD) hybrids have been designed and fabricated. By electrical and photoelectrical measurements, the carrier mobilities reached to 1621 cm2V-1s-1 for electrons and 1228 cm2V-1s-1 for holes, the photoresponsivity (R) achieved to 1 AW-1, and the photoresponse time (τ1) was 0.7 s when the photocurrent came to about 80%. Therefore, the FEpTs based on graphene-QD hybrids have shown broad application prospects.
© Owned by the authors, published by EDP Sciences, 2016
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