CMOS Pixel Spectroscopic Circuits for Cd(Zn)Te Gamma Ray Imagers
1 Oy Ajat Ltd, Tekniikantie 4 B, FIN-02150 ESPOO, Finland
2 Adveos Microelectronic Systems P.C., 19 Ag. Ioannou Str, 25100, Aigio, Greece
3 European Sensor Systems SA, 7 Stratigi str, Neo Psychico, 15451, Greece
4 Institute of Nuclear Physics, National Center for Scientific Research, Agia Paraskevi, Greece
5 Technological Educational Institute of Sterea Ellada, Psahna – Evia, 34400, Greece
a Corresponding author: firstname.lastname@example.org
A family of 2-D pixel CMOS ASICs have been developed to be used as readout electronics of gamma ray imaging instruments based on hybrid pixel sensor arrays. One element of the sensor array consists of a pixilated single crystal of CdTe or CdZnTe semiconductor bump bonded to the CMOS electronic circuit. The first member of the family can process single photon signals which deliver up to 4fCb charge, while the two other can process signals up to 36fCb. A unique readout mode and the simultaneous extraction of energy and time tagging information of the converted photons differentiate the members of this family from other existing CMOS readout circuits.
© Owned by the authors, published by EDP Sciences, 2016
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