Accurate SPICE Modeling of Poly-silicon Resistor in 40nm CMOS Technology Process for Analog Circuit Simulation
1 School of Information Science and Technology, East China Normal University, Shanghai, China
2 Shanghai IC R&D Center, Shanghai, China
3 Huali Microelectronics Corporation, Shanghai, China
In this paper, the SPICE model of poly resistor is accurately developed based on silicon data. To describe the non-linear R-V trend, the new correlation in temperature and voltage is found in non-silicide poly-silicon resistor. A scalable model is developed on the temperature-dependent characteristics (TDC) and the temperature-dependent voltage characteristics (TDVC) from the R-V data. Besides, the parasitic capacitance between poly and substrate are extracted from real silicon structure in replacing conventional simulation data. The capacitance data are tested through using on-wafer charge-induced-injection error-free charge-based capacitance measurement (CIEF-CBCM) technique which is driven by non-overlapping clock generation circuit. All modeling test structures are designed and fabricated through using 40nm CMOS technology process. The new SPICE model of poly-silicon resistor is more accurate to silicon for analog circuit simulation.
Key words: poly-silicon resistor / temperature-dependent voltage characteristics (TDVC) / parasitic capacitance / SPICE model
© Owned by the authors, published by EDP Sciences, 2015
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