Increase resource power electronics module on the physics of failure method
Tomsk Polytechnic University, 634050 Tomsk, Russia Lenin av., 30
a Corresponding author: firstname.lastname@example.org
A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural convection and obtained by using statistical data analysis. The integrated assessment of reliability based on the methods of physics failures. The necessity of taking into account the actual non-stationary temperature fields to improve the reliability of the forecast operating life of power semiconductor devices.
© Owned by the authors, published by EDP Sciences, 2014
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.