Femtosecond Single-Pulse Absorption in Semiconductors with varying Dopant Concentration
Townes Laser Institute, CREOL, University of Central Florida, 4000 Central Florida Blvd. Bl. 53, Orlando, FL, 32816, USA
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The influence of dopant concentration on the absorption of femtosecond mid-IR pulses is described. The measured results are compared to a theoretical absorption model.
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